A super low power MICS band receiver front-end down converter on 65 nm CMOS

J. Yang, M. Fu, E. Skafidas, N. Tran, S. Bai, I. Mareels, D. C. Ng, M. Halpern

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

This paper presents a super low power MICS band receiver front-end down converter on 65 nm CMOS for implantable biomedical devices. This down converter, including a LNA and a quadrature mixer, only consumes 500 μA DC current under 1 V supply. With a small LO swing of 300 mV, it provides a voltage conversion gain of 35 dB and a noise figure of 7.4 dB, while a -20 dBm IIP3 is obtained. In order to achieve super low power, current-reuse structure is adopted and all transistors are operated in deep sub-threshold region. Circuits level issues and techniques are also discussed.

Original languageEnglish
Title of host publicationProceedings - 2010 3rd International Conference on Biomedical Engineering and Informatics, BMEI 2010
Pages1412-1415
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event3rd International Conference on BioMedical Engineering and Informatics, BMEI 2010 - Yantai, China
Duration: 16 Oct 201018 Oct 2010

Publication series

NameProceedings - 2010 3rd International Conference on Biomedical Engineering and Informatics, BMEI 2010
Volume4

Conference

Conference3rd International Conference on BioMedical Engineering and Informatics, BMEI 2010
Country/TerritoryChina
CityYantai
Period16/10/1018/10/10

Keywords

  • Down converter
  • Implantable biomedical device
  • MICS band
  • Sub-threshold
  • Super low power

ASJC Scopus subject areas

  • Biomedical Engineering
  • Health Informatics
  • Health Information Management

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