A Sub-kBT/q Dirac-source Graphene Nanoribbon Field-effect Transistor

E. Chen, A. Sanchez-Soares, T. Kelly, G. Fagas, J. C. Greer

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

A sub-kB T/q Dirac-source (DS) graphene nanoribbon FET has been studied using a coupled mode-space non-equilibrium Green function solver employing k·p electronic structures. A 13 dimer wide armchair graphene nanoribbon (13-AGNR) FET connected to a semimetallic 162-AGNR source contact is simulated to study the physics of a proposed DSFET design. Density-of-states filtering at the source contact is explored by shifting its Fermi level via variations on doping concentration. An optimized design achieves a minimum subthreshold swing (SS) of 42 mV/dec and sub-60mV/dec operation across three orders of ID magnitude.

Original languageEnglish
Title of host publicationSISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages98-101
Number of pages4
ISBN (Electronic)9781665406857
DOIs
Publication statusPublished - 27 Sep 2021
Event26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021 - Dallas, United States
Duration: 27 Sep 202129 Sep 2021

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2021-September

Conference

Conference26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021
Country/TerritoryUnited States
CityDallas
Period27/09/2129/09/21

Keywords

  • Dirac source
  • DoS filtering
  • Sub-kBT/q
  • graphene nanoribbon
  • ultra-low VDD applications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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