A proposed confinement modulated gap nanowire transistor based on a metal (Tin)

Engineering & Materials Science

• Metalloids 100%
• Nanowires 67%
• Quantum confinement 67%
• Tin 63%
• Energy gap 62%
• Semiconductor materials 48%
• Transistors 46%
• Doping (additives) 40%
• Metals 35%
• Nanostructures 22%
• Field effect transistors 19%
• Impurities 17%
• Wire 13%

Physics & Astronomy

• metalloids 61%
• tin 51%
• nanowires 44%
• transistors 43%
• metals 27%
• engineering 26%
• field effect transistors 14%
• wire 13%
• scaling 12%
• requirements 12%
• impurities 12%
• energy 5%

Chemical Compounds

• Nanowire 47%
• Band Gap 41%
• Semiconductor 27%
• Metal 24%
• Field Effect 18%
• Doping Material 16%
• Dimension 13%
• Nanomaterial 11%
• Length 10%
• Energy 8%