TY - JOUR
T1 - Zr-Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite-Based Tandem Solar Cells
AU - Aydin, Erkan
AU - De Bastiani, Michele
AU - Yang, Xinbo
AU - Sajjad, Muhammad
AU - Aljamaan, Faisal
AU - Smirnov, Yury
AU - Hedhili, Mohamed Nejib
AU - Liu, Wenzhu
AU - Allen, Thomas G.
AU - Xu, Lujia
AU - Van Kerschaver, Emmanuel
AU - Morales-Masis, Monica
AU - Schwingenschlögl, Udo
AU - De Wolf, Stefaan
N1 - Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/6/21
Y1 - 2019/6/21
N2 - Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite-based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr-doped indium oxide (IZRO) transparent electrodes for such applications, with improved near-infrared (NIR) response, compared to conventional tin-doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm2 V−1 s−1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □−1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In2O3) films due to Zr-doping. Overall, on a four-terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm−2 short-circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.
AB - Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite-based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr-doped indium oxide (IZRO) transparent electrodes for such applications, with improved near-infrared (NIR) response, compared to conventional tin-doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm2 V−1 s−1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □−1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In2O3) films due to Zr-doping. Overall, on a four-terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm−2 short-circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.
KW - high mobility
KW - improved near-infrared response
KW - indium zirconium oxide
KW - perovskite tandem solar cells
KW - transparent electrodes
UR - https://www.scopus.com/pages/publications/85064156452
U2 - 10.1002/adfm.201901741
DO - 10.1002/adfm.201901741
M3 - Article
AN - SCOPUS:85064156452
SN - 1616-301X
VL - 29
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 25
M1 - 1901741
ER -
