Transport properties and electrical device characteristics with the TiMeS computational platform: Application in silicon nanowires

Keyphrases

• Transistor 100%
• Silicon Nanowires (SiNWs) 100%
• Electrical Devices 100%
• Transport Properties 100%
• Current-voltage Characteristics 100%
• Platform Application 100%
• Device Characteristics 100%
• Computational Platform 100%
• Nanowires 50%
• Surface Oxygen 50%
• Nanoelectronics 50%
• Dopant 50%
• P-type Doping 50%
• Computational Methods 50%
• Quantum Transport 50%
• Material Design 50%
• Self-consistency 50%
• Chemical Nature 50%
• Atomic Scale 50%
• Device Design 50%
• Mean Free Path 50%
• Computation Tools 50%
• Doping Profile 50%
• Oxygen Impurity 50%
• Device Simulation 50%
• P-n Junction 50%
• Material Transport 50%
• First-principles Electronic Structure 50%
• Efficient Calculation 50%
• Current Transfer Characteristic 50%
• Off-state 50%
• Device Yield 50%
• Tunneling Current 50%
• Technology Assessment 50%
• Physical Effects 50%

Material Science

• Nanowire 100%
• Silicon 100%
• Transistor 66%
• Doping (Additives) 33%
• Electronic Structure 33%
• Current Voltage Characteristics 33%