The Role of Modulation Techniques on Power Device Thermal Performance in Two-Level VSI Converters

The failure of power semiconductors due to variations in junction temperature represents an important factor in determining the reliability of a power converter. This work presents a comparative assessment of the thermal performance of IGBT power semiconductors within a two-level voltage source converter, specifically the average junction temperature and the variation of this value over a given period. The evaluation was carried out using different continuous and discontinuous carrier-based pulse width modulation (CB-PWM) techniques. The use of discontinuous PWM allows for a decrease in switching losses and therefore in average junction temperatures, but the variation in junction temperature is largely and non-linearly dependent on several factors, including the power factor of the three-phase load. Among the discontinuous PWM techniques, this analysis focuses on those that allow for a symmetric thermal load. The aforementioned comparisons have been tested in a laboratory setup, whee we directly measured the junction temperature through a high-end infrared thermal camera.