Status and perspectives of nanoscale device modelling

M. Macucci; G. Iannaccone; J. Greer; J. Martorell; D. W.L. Sprung; A. Schenk; I. I. Yakimenko; K. F. Berggren; K. Stokbro; N. Gippius

doi:10.1088/0957-4484/12/2/313

Status and perspectives of nanoscale device modelling

M. Macucci, G. Iannaccone, J. Greer, J. Martorell, D. W.L. Sprung, A. Schenk, I. I. Yakimenko, K. F. Berggren, K. Stokbro, N. Gippius

Research output: Journal Publication › Conference article › peer-review

20 Citations (Scopus)

Abstract

During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology Information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status and the future perspectives of nanoscale device modelling. The outcome of such a discussion is summarized in the present paper, outlining the major challenges for the future, such as the integration of nonequilibrium phenomena and of molecular-scale properties. We believe that modelling has a growing importance in the development of nanoelectronic devices and must therefore make a move from physics to engineering, providing valid design tools, with quantitative predictive capabilities.

Original language	English
Pages (from-to)	136-142
Number of pages	7
Journal	Nanotechnology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/12/2/313
Publication status	Published - Jun 2001
Externally published	Yes
Event	Trends in Nanotechnology (TNT 2000) Conference - Toledo, Spain Duration: 12 Oct 2000 → 16 Oct 2000

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/12/2/313

Cite this

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title = "Status and perspectives of nanoscale device modelling",

abstract = "During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology Information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status and the future perspectives of nanoscale device modelling. The outcome of such a discussion is summarized in the present paper, outlining the major challenges for the future, such as the integration of nonequilibrium phenomena and of molecular-scale properties. We believe that modelling has a growing importance in the development of nanoelectronic devices and must therefore make a move from physics to engineering, providing valid design tools, with quantitative predictive capabilities.",

author = "M. Macucci and G. Iannaccone and J. Greer and J. Martorell and Sprung, \{D. W.L.\} and A. Schenk and Yakimenko, \{I. I.\} and Berggren, \{K. F.\} and K. Stokbro and N. Gippius",

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TY - JOUR

T1 - Status and perspectives of nanoscale device modelling

AU - Macucci, M.

AU - Iannaccone, G.

AU - Greer, J.

AU - Martorell, J.

AU - Sprung, D. W.L.

AU - Schenk, A.

AU - Yakimenko, I. I.

AU - Berggren, K. F.

AU - Stokbro, K.

AU - Gippius, N.

PY - 2001/6

Y1 - 2001/6

N2 - During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology Information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status and the future perspectives of nanoscale device modelling. The outcome of such a discussion is summarized in the present paper, outlining the major challenges for the future, such as the integration of nonequilibrium phenomena and of molecular-scale properties. We believe that modelling has a growing importance in the development of nanoelectronic devices and must therefore make a move from physics to engineering, providing valid design tools, with quantitative predictive capabilities.

AB - During the meetings of the theory and modelling working group, within the MEL-ARI (Microelectronics Advanced Research Initiative) and NID-FET (Nanotechnology Information Devices-Future and Emerging Technologies) initiatives of the European Commission, we have been discussing the current status and the future perspectives of nanoscale device modelling. The outcome of such a discussion is summarized in the present paper, outlining the major challenges for the future, such as the integration of nonequilibrium phenomena and of molecular-scale properties. We believe that modelling has a growing importance in the development of nanoelectronic devices and must therefore make a move from physics to engineering, providing valid design tools, with quantitative predictive capabilities.

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U2 - 10.1088/0957-4484/12/2/313

DO - 10.1088/0957-4484/12/2/313

M3 - Conference article

AN - SCOPUS:0035356889

SN - 0957-4484

VL - 12

SP - 136

EP - 142

JO - Nanotechnology

JF - Nanotechnology

IS - 2

T2 - Trends in Nanotechnology (TNT 2000) Conference

Y2 - 12 October 2000 through 16 October 2000

ER -

Status and perspectives of nanoscale device modelling

Abstract

ASJC Scopus subject areas

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