Simulation of junctionless Si nanowire transistors with 3 nm gate length

Keyphrases

• Silicon Nanowire Transistor 100%
• Junction-less 100%
• Gate Length 100%
• Major Change 50%
• Transistor 50%
• Dopant 50%
• Silicon Nanowires (SiNWs) 50%
• First-principles 50%
• Junctionless Transistor 50%
• Wire Diameter 50%
• Atomic Level 50%
• Nanowire-based Devices 50%
• Design philosophy 50%
• Experimental Realization 50%
• Thin-film Silicon 50%
• Si-based 50%
• Level Design 50%

Material Science

• Nanowire 100%
• Transistor 100%
• Doping (Additives) 25%
• Silicon 25%
• Nanowire Based Device 25%