Photo-dissociation of hydrogen passivated dopants in gallium arsenide

  • L. Tong
  • , J. A. Larsson
  • , M. Nolan
  • , M. Murtagh
  • , J. C. Greer
  • , M. Barbe
  • , F. Bailly
  • , J. Chevallier
  • , F. S. Silvestre
  • , D. Loridant-Bernard
  • , E. Constant
  • , F. M. Constant

Research output: Journal PublicationArticlepeer-review

3 Citations (Scopus)

Abstract

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of CAs-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.

Original languageEnglish
Pages (from-to)234-239
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume186
Issue number1-4
DOIs
Publication statusPublished - Jan 2002
Externally publishedYes

Free Keywords

  • Gallium arsenide
  • Hydrogen passivation
  • Photo-dissociation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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