Oxygen vacancies at the Si(001)/SiO₂ interface

Keyphrases

• Silica 100%
• Oxygen Vacancy 100%
• Si(111) 100%
• Silicon Dioxide 100%
• Low Temperature 50%
• Oxide Layer 50%
• Dielectric Constant 50%
• Growth Process 50%
• Charge Transport 50%
• Interface Layer 50%
• Atomic Layer Deposition 50%
• Electrical Characterization 50%
• Microelectronics 50%
• Copyright 50%
• Oxygen Reduction 50%
• Dioxide 50%
• Thermal Oxide 50%
• Equivalent Oxide Thickness 50%
• Silicon Substrate 50%
• Hafnia 50%
• Oxygen Deficiency 50%
• High-k Oxides 50%
• Interfacial Region 50%
• Ab Initio Computations 50%
• Chemical Driving Force 50%

Engineering

• Oxygen Vacancy 100%
• Dielectrics 50%
• Low-Temperature 50%
• Oxide Layer 50%
• Charge Transport 50%
• Microelectronics 50%
• Interface Layer 50%
• Atomic Layer Deposition 50%
• Growth Process 50%
• Oxide Thickness 50%
• Oxygen Reduction 50%
• Interfacial Region 50%
• Chemical Driving Force 50%
• Silicon Substrate 50%

Material Science

• Oxide Compound 100%
• Oxygen Vacancy 100%
• Silicon Dioxide 50%
• Silicon 50%
• Permittivity 25%