TY - JOUR
T1 - High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters
AU - Wu, Haijuan
AU - Liang, Lingyan
AU - Wang, Xiaolong
AU - Shi, Xixiu
AU - Zhang, Hengbo
AU - Pei, Yu
AU - Li, Wanfa
AU - Sun, Bo
AU - Shen, Cai
AU - Cao, Hongtao
PY - 2023/3
Y1 - 2023/3
N2 - High-performance transparent and low-process-temperature p-type devices are essential for portable and ‘invisible’ electronics. In this work, high-performance p-channel copper iodide (CuI) thin-film transistors (TFTs) with a bottom-gate structure are achieved via replacing traditional SiO2 dielectric with Chitosan (CS, a kind of solid polymer electrolytes), with the threshold voltage down to −0.35 V, field-effect mobility (μFE) up to 60 cm2V−1s−1 and on/off current ratio (Ion/Ioff) beyond 103. The CuI films spin-coated on CS-dielectrics in the air with high humidity have smoother surface morphology, tinier grains, higher packing density and hence a higher μFE, in sharp contrast with the SiO2 case. In addition, the CuI films on CS-dielectrics demonstrate a work function ∼ 0.1 eV lower than that on SiO2, which implies a smaller hole concentration and higher Ion/Ioff. And the low process temperature (
AB - High-performance transparent and low-process-temperature p-type devices are essential for portable and ‘invisible’ electronics. In this work, high-performance p-channel copper iodide (CuI) thin-film transistors (TFTs) with a bottom-gate structure are achieved via replacing traditional SiO2 dielectric with Chitosan (CS, a kind of solid polymer electrolytes), with the threshold voltage down to −0.35 V, field-effect mobility (μFE) up to 60 cm2V−1s−1 and on/off current ratio (Ion/Ioff) beyond 103. The CuI films spin-coated on CS-dielectrics in the air with high humidity have smoother surface morphology, tinier grains, higher packing density and hence a higher μFE, in sharp contrast with the SiO2 case. In addition, the CuI films on CS-dielectrics demonstrate a work function ∼ 0.1 eV lower than that on SiO2, which implies a smaller hole concentration and higher Ion/Ioff. And the low process temperature (
KW - Metal (pseudo) halides
KW - P-type semiconductors
KW - Thin-film transistors
KW - Kelvin probe force microscope
KW - Complementary devices/circuits
UR - http://dx.doi.org/10.1016/j.apsusc.2022.155795
U2 - 10.1016/j.apsusc.2022.155795
DO - 10.1016/j.apsusc.2022.155795
M3 - Article
SN - 0169-4332
VL - 612
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 155795
ER -