Abstract
Figure Persented: Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m 2. Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.
| Original language | English |
|---|---|
| Pages (from-to) | 5687-5692 |
| Number of pages | 6 |
| Journal | ACS Nano |
| Volume | 6 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 26 Jun 2012 |
| Externally published | Yes |
Free Keywords
- GaN nanowires
- LED
- nanogenerator
- piezoelectric
- self-powered system
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy