TY - GEN
T1 - Electrothermal Simulation and Vertical Interconnect Planning for Integrated Chiplets
AU - Miao, Siyuan
AU - Zhu, Lingkang
AU - Yang, Wenkai
AU - Lu, Teng
AU - Zhou, Yanze
AU - Wu, Chen
AU - Yu, Zhiping
AU - Lin, Ting Jung
AU - He, Lei
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - Chiplets are emerging as novel solutions for high-performance AI computing processors. Vertical interconnects (VICs) including μbumps, C4 bumps and through-silicon vias (TSVs) in chiplets are critical as they not only carry signals and power supplies but also transfer heat efficiently. Due to the need of fine-grained VIC modeling, existing thermal tools are ineffective for VIC-embedded chiplets. Moreover, electrothermal analysis in previous architectural simulators does not consider temperature dependence for short-circuit power, which is nontrivial in our experiments. To address the above problems, this paper proposes SYSgen, a framework for accurate, location-based temperature-dependent power profiling and VIC planning for integrated chiplets. SYSgen achieves a 97.77× speedup with a maximum error below 1.2°C when the chiplet temperature is around 100°C compared to COMSOL. It also reduces VIC number by 21.7% and 12.4% compared to two existing papers with same constraints on signal and power routing and maximum temperature.
AB - Chiplets are emerging as novel solutions for high-performance AI computing processors. Vertical interconnects (VICs) including μbumps, C4 bumps and through-silicon vias (TSVs) in chiplets are critical as they not only carry signals and power supplies but also transfer heat efficiently. Due to the need of fine-grained VIC modeling, existing thermal tools are ineffective for VIC-embedded chiplets. Moreover, electrothermal analysis in previous architectural simulators does not consider temperature dependence for short-circuit power, which is nontrivial in our experiments. To address the above problems, this paper proposes SYSgen, a framework for accurate, location-based temperature-dependent power profiling and VIC planning for integrated chiplets. SYSgen achieves a 97.77× speedup with a maximum error below 1.2°C when the chiplet temperature is around 100°C compared to COMSOL. It also reduces VIC number by 21.7% and 12.4% compared to two existing papers with same constraints on signal and power routing and maximum temperature.
KW - Integrated chiplets
KW - through-silicon via (TSV)
KW - vertical interconnect planning
UR - https://www.scopus.com/pages/publications/105014241366
U2 - 10.1109/ISEDA65950.2025.11100500
DO - 10.1109/ISEDA65950.2025.11100500
M3 - Conference contribution
AN - SCOPUS:105014241366
T3 - 2025 International Symposium of Electronics Design Automation, ISEDA 2025
SP - 705
EP - 711
BT - 2025 International Symposium of Electronics Design Automation, ISEDA 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2025 International Symposium of Electronics Design Automation, ISEDA 2025
Y2 - 9 May 2025 through 12 May 2025
ER -