Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction

Y. Zhang; J. J. Lim; T. M. Benson; P. Sewell; S. Dods; B. C. Larkins

doi:10.1023/A:1024431901949

Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction

Y. Zhang
, J. J. Lim
, T. M. Benson
, P. Sewell
, S. Dods
, B. C. Larkins

Research output: Journal Publication › Article › peer-review

Abstract

Designs for 980 nm Al_xGa_1-xAs/In_0.2Ga_0.8As/GaAs high-power, high-brightness semiconductor lasers/amplifiers with distributed phase correction and short-cavity lengths (i.e. cavity lengths 560 - 1040 μm) are presented. The proposed lasers/amplifiers employ a single mode feed waveguide coupled to a power amplifier with a laterally graded effective refractive index (GRIN) profile to control the lateral mode shape and phase. The lateral index of the power amplifier has a hyperbolic secant (HYSEC) profile, which can be approximately realised by tailoring the effective refractive index of the amplifier using a series of discrete etches. The epitaxial and structure designs of the laterally discretised GRIN lasers/ amplifiers are presented. Finally, a method for improving the effective refractive index discretisation is described.

Original language	English
Pages (from-to)	887-901
Number of pages	15
Journal	Optical and Quantum Electronics
Volume	35
Issue number	9
DOIs	https://doi.org/10.1023/A:1024431901949
Publication status	Published - Jul 2003
Externally published	Yes

Free Keywords

Astigmatism
Graded index
Laser amplifiers
Laser diodes
M

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1023/A:1024431901949

Cite this

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title = "Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction",

abstract = "Designs for 980 nm AlxGa1-xAs/In0.2Ga0.8As/GaAs high-power, high-brightness semiconductor lasers/amplifiers with distributed phase correction and short-cavity lengths (i.e. cavity lengths 560 - 1040 μm) are presented. The proposed lasers/amplifiers employ a single mode feed waveguide coupled to a power amplifier with a laterally graded effective refractive index (GRIN) profile to control the lateral mode shape and phase. The lateral index of the power amplifier has a hyperbolic secant (HYSEC) profile, which can be approximately realised by tailoring the effective refractive index of the amplifier using a series of discrete etches. The epitaxial and structure designs of the laterally discretised GRIN lasers/ amplifiers are presented. Finally, a method for improving the effective refractive index discretisation is described.",

keywords = "Astigmatism, Graded index, Laser amplifiers, Laser diodes, M",

author = "Y. Zhang and Lim, \{J. J.\} and Benson, \{T. M.\} and P. Sewell and S. Dods and Larkins, \{B. C.\}",

year = "2003",

month = jul,

doi = "10.1023/A:1024431901949",

language = "English",

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T1 - Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction

AU - Zhang, Y.

AU - Lim, J. J.

AU - Benson, T. M.

AU - Sewell, P.

AU - Dods, S.

AU - Larkins, B. C.

PY - 2003/7

Y1 - 2003/7

N2 - Designs for 980 nm AlxGa1-xAs/In0.2Ga0.8As/GaAs high-power, high-brightness semiconductor lasers/amplifiers with distributed phase correction and short-cavity lengths (i.e. cavity lengths 560 - 1040 μm) are presented. The proposed lasers/amplifiers employ a single mode feed waveguide coupled to a power amplifier with a laterally graded effective refractive index (GRIN) profile to control the lateral mode shape and phase. The lateral index of the power amplifier has a hyperbolic secant (HYSEC) profile, which can be approximately realised by tailoring the effective refractive index of the amplifier using a series of discrete etches. The epitaxial and structure designs of the laterally discretised GRIN lasers/ amplifiers are presented. Finally, a method for improving the effective refractive index discretisation is described.

AB - Designs for 980 nm AlxGa1-xAs/In0.2Ga0.8As/GaAs high-power, high-brightness semiconductor lasers/amplifiers with distributed phase correction and short-cavity lengths (i.e. cavity lengths 560 - 1040 μm) are presented. The proposed lasers/amplifiers employ a single mode feed waveguide coupled to a power amplifier with a laterally graded effective refractive index (GRIN) profile to control the lateral mode shape and phase. The lateral index of the power amplifier has a hyperbolic secant (HYSEC) profile, which can be approximately realised by tailoring the effective refractive index of the amplifier using a series of discrete etches. The epitaxial and structure designs of the laterally discretised GRIN lasers/ amplifiers are presented. Finally, a method for improving the effective refractive index discretisation is described.

KW - Astigmatism

KW - Graded index

KW - Laser amplifiers

KW - Laser diodes

KW - M

UR - https://www.scopus.com/pages/publications/0038717844

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DO - 10.1023/A:1024431901949

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JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 9

ER -

Design and optimisation of high-brightness 980 nm laser diodes with distributed phase correction

Abstract

Free Keywords

ASJC Scopus subject areas

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