Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium

S. Fahy; J. C. Greer

doi:10.1016/S1369-8001(00)00024-X

Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium

S. Fahy, J. C. Greer

Research output: Journal Publication › Conference article › peer-review

5 Citations (Scopus)

Abstract

Cluster and band structure calculations for the electronic energy levels of silicon-germanium systems are presented. Much of the electronic structure information concerning silicon-germanium alloys to date relies upon the virtual crystal approximation (VGA). A discussion is presented for corrections beyond the VGA and in particular the use of full band calculations for device modeling of SiGe technologies.

Original language	English
Pages (from-to)	109-114
Number of pages	6
Journal	Materials Science in Semiconductor Processing
Volume	3
Issue number	1-2
DOIs	https://doi.org/10.1016/S1369-8001(00)00024-X
Publication status	Published - Mar 2000
Externally published	Yes
Event	1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

Keywords

Band structure
Device modeling
Electron scattering
Silicon-germanium

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-8001(00)00024-X

Cite this

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title = "Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium",

abstract = "Cluster and band structure calculations for the electronic energy levels of silicon-germanium systems are presented. Much of the electronic structure information concerning silicon-germanium alloys to date relies upon the virtual crystal approximation (VGA). A discussion is presented for corrections beyond the VGA and in particular the use of full band calculations for device modeling of SiGe technologies.",

keywords = "Band structure, Device modeling, Electron scattering, Silicon-germanium",

author = "S. Fahy and Greer, \{J. C.\}",

note = "Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; 1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling ; Conference date: 01-06-1999 Through 04-06-1999",

year = "2000",

month = mar,

doi = "10.1016/S1369-8001(00)00024-X",

language = "English",

volume = "3",

pages = "109--114",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

number = "1-2",

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TY - JOUR

T1 - Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium

AU - Fahy, S.

AU - Greer, J. C.

PY - 2000/3

Y1 - 2000/3

N2 - Cluster and band structure calculations for the electronic energy levels of silicon-germanium systems are presented. Much of the electronic structure information concerning silicon-germanium alloys to date relies upon the virtual crystal approximation (VGA). A discussion is presented for corrections beyond the VGA and in particular the use of full band calculations for device modeling of SiGe technologies.

AB - Cluster and band structure calculations for the electronic energy levels of silicon-germanium systems are presented. Much of the electronic structure information concerning silicon-germanium alloys to date relies upon the virtual crystal approximation (VGA). A discussion is presented for corrections beyond the VGA and in particular the use of full band calculations for device modeling of SiGe technologies.

KW - Band structure

KW - Device modeling

KW - Electron scattering

KW - Silicon-germanium

UR - https://www.scopus.com/pages/publications/24944552236

U2 - 10.1016/S1369-8001(00)00024-X

DO - 10.1016/S1369-8001(00)00024-X

M3 - Conference article

AN - SCOPUS:24944552236

SN - 1369-8001

VL - 3

SP - 109

EP - 114

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1-2

T2 - 1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling

Y2 - 1 June 1999 through 4 June 1999

ER -

Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium

Abstract

Keywords

ASJC Scopus subject areas

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